200909141-3 adva nced power electronics corp. 1/5 AP15P15GH-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com p-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data bv -140v fast switching characteristic r 180mw low on-resistance simple drive requirement rohs-compliant, halogen-free i -1 5 a o rdering information ap1 5 p15gh-hf-3 tr : in rohs-compliant halogen-free to-252 , shipped on tape and reel ( 3000 pcs/reel) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the ap1 5 p15gh-hf-3 is in the to-2 52 package, which is widely used for commercial and industrial surface-mount applications, and is well suited for low voltage applications such as dc/dc converters. g d s g d s to-252 (h) d (tab) symbol units v ds v gs i d at t c =2 5 c i d at t c =10 0 c i dm a p d at t c =2 5 c w / c t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1. 4 c/w rthj-a 62.5 c/w maximum thermal resistance, junction-ambient (pcb mount) 3 parameter drain-source voltage gate-source voltage continuous drain current -55 to 150 c linear derating factor 89 w -55 to 150 c parameter total power dissipation operating junction temperature range storage temperature range continuous drain current - 9.7 a pulsed drain curren t 1 - 60 rating -1 4 0 v 20 v -1 5 a 0.7 1
adva nced power electronics corp. 2/5 AP15P15GH-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode notes: 1.pulse width limited by maximum junction temperature. 2.pulse test - pulse width < 300s, duty cycle < 2% this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in copper pad of fr4 board symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-1ma -140 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-12a - - 180 mw v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-12a - 12 - s i dss drain-source leakage current v ds =-120v, v gs =0v - - -25 ua i gss gate-source leakage v gs = 20v, v ds =0v - - 100 na q g total gate charge 2 i d =-12a - 55 90 nc q gs gate-source charge v ds =-80v - 8.2 - nc q gd gate-drain ("miller") charge v gs =-10v - 16.6 - nc t d(on) turn-on delay time 2 v ds =-50v - 11 - ns t r rise time i d =-12a - 26 - ns t d(off) turn-off delay time r g =3.3w , v gs =-10v - 67 - ns t f fall time r d =4.2w -60- ns c iss input capacitance v gs =0v - 2850 4560 pf c oss output capacitance v ds =-25v - 150 - pf c rss reverse transfer capacitance f=1.0mhz - 100 - pf r g gate resistance f=1.0mhz - 6.6 10 w symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-12a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-12a, v gs =0v, - 75 - ns q rr reverse recovery charge di/dt=-100a/s - 250 - nc
adva nced power electronics corp. 3/5 AP15P15GH-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance vs. gate voltage fig 4. normalized on-resistance vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 130 140 150 160 24681 0 -v gs , gate-to-source voltage (v) r ds(on) ( mw ) i d =-8a t c =25c 0 10 20 30 40 50 0 4 8 12 16 20 24 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c - 10 v - 7.0 v - 6 0 v - 5 0 v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -12a v g = -10v 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0 8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 10 20 30 40 0 4 8 1 21 6 2 02 4 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =150 o c -10v -7.0v -6.0v -5.0v v g = -4.0v
adva nced power electronics corp. 4/5 AP15P15GH-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. typical power dissipation fig 12. gate charge waveform typical electrical characteristics (cont.) q v g -10v q gs q gd q g charge 0 3 6 9 12 15 0 2 04 06 08 0 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -80v i d = -18a 0 1000 2000 3000 4000 1 5 9 1 31 72 12 52 9 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 01 0 1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor t/t peak t j p dm x r thjc t c t t 0.02 0.01 0.05 0 1 0.2 duty factor=0 5 s ngle pulse 0 1 10 100 0 1 1 10 100 1000 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) 0 20 40 60 80 100 0 50 100 150 t c , case temperature ( o c ) p d (w)
adva nced power electronics corp. 5/5 AP15P15GH-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information laser marking symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm product: ap15p155 gh = rohs-compliant halogen-free to-252 15p15gh5 ywwsss date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence e3 package code
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